HOMOGENEOUS ELECTROCHEMICAL ETCHING METHOD FOR SILICON WAFER

摘要

The present invention relates to a homogeneous electrochemical etching method of a silicon wafer and, more specifically, to an electrochemical etching method enabling a user to homogeneously perform electrochemical etching on a silicon wafer using an etching solution containing acid, distilled water, and isopropanol, wherein the viscosity of the solution is maximized by limiting the content of the isopropanol to a certain volume fraction. [Reference numerals] (AA) Viscosity (cp); (BB) Volume fraction of isopropanol (%)