发明名称 |
METHOD FOR FORMING DOPING REGION AND METHOD FOR FORMING MOS |
摘要 |
The present invention provides a method of forming a doping region. A substrate is provided, and a poly-silicon layer is formed on the substrate. A silicon oxide layer is formed on the poly-silicon layer. An implant process is performed to form a doping region in the poly-silicon layer. The present invention further provides a method for forming a MOS. |
申请公布号 |
US2014099751(A1) |
申请公布日期 |
2014.04.10 |
申请号 |
US201213647344 |
申请日期 |
2012.10.08 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
SU HAO;HU HANG;LIAO HONG |
分类号 |
H01L21/336;H01L21/28;H01L31/18 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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