THIN FILM TRANSISTOR AND FORMING THE SAME

摘要

A thin film transistor and a manufacturing method thereof are provided. A method for manufacturing a thin film transistor includes forming a gate electrode on a substrate; forming an active layer which is adjacent to the gate electrode and includes an oxide semiconductor; forming an oxygen providing layer on the active layer; forming a gate insulating layer between the gate electrode and the active layer; forming source/drain electrodes which are combined with the active layer; forming a planarization layer which covers the gate electrode and the gate insulating layer; forming a hole which exposes the active layer; and performing a thermal process on the planarization layer in an oxygen atmosphere. [Reference numerals] (AA) Start; (BB) End; (S10) Forming source/drain electrodes on a substrate; (S20) Forming an active layer and an oxygen providing layer; (S30) Forming a gate insulating layer; (S40) Forming a gate electrode; (S50) Forming a planarization layer and a hole; (S60) Performing a thermal process in an oxygen atmosphere