SOL-GEL METHOD OF FORMING FERROELECTRIC STRONTIUM-BISMUTH-TANTALUM OXIDE FILM

摘要

FIELD: physics.SUBSTANCE: invention relates to semiconductor micro- and nanoelectronics and specifically to a sol-gel technique of producing ferroelectric strontium-bismuth-tantalum oxide thin films on integrated circuits, which are used in nonvolatile FRAM. The technical result of the invention is ensuring homogeneity of the obtained ferroelectric film, easy monitoring of the sol preparation process and longer shelf life of the initial sol, low power consumption of the process and low cost thereof. The sol-gel method of forming a ferroelectric strontium-bismuth-tantalum oxide film involves preparation of starting solutions of strontium chloride, bismuth chloride and tantalum chloride. Each obtained solution undergoes ultrasonic treatment for 20-40 minutes, held for a day at room temperature and then filtered. The solution are mixed into one solution and then held for a day at room temperature. A film-forming solution is obtained, which is deposited on a substrate. The substrate with the film-forming solution is dried at 50-450°C and the film is annealed in the presence of oxygen at 700-800°C for 1-2 hours.EFFECT: obtaining a ferroelectric strontium-bismuth-tantalum oxide film.5 dwg