Plasma Etch Resistant Films, Articles Bearing Plasma Etch Resistant Films and Related Methods

摘要

The invention includes a plasma etch-resistant film for a substrate comprising a yttria material wherein at least a portion of the yttria material is in a crystal phase having a crystal lattice structure, wherein at least 50% of the yttria material is in a form of a monoclinic crystal system. The film may be treated by exposure to a fluorine gas plasma. Also included are plasma etch-resistant articles that include a substrate and a film, wherein the film comprises an yttria material and at least a portion of the yttria material is present in the film in a crystal phase having a crystal lattice structure and at least 50% of the yttria material is in a form of a monoclinic crystal system. Several methods are contemplated within the scope of the invention.