发明名称 |
VERTICAL TYPE MEMORY DEVICE |
摘要 |
A semiconductor device, comprising: a plurality of memory cell strings; a bitline; and an interconnection coupling at least two of the memory cell strings to the bitline. Memory cell strings can be coupled to corresponding bitlines through corresponding interconnections. Alternate memory cell strings can be coupled to different bitlines through corresponding different interconnections. |
申请公布号 |
US2014097484(A1) |
申请公布日期 |
2014.04.10 |
申请号 |
US201313844337 |
申请日期 |
2013.03.15 |
申请人 |
SEOL KWANG-SOO;CHO SEONG-SOON |
发明人 |
SEOL KWANG-SOO;CHO SEONG-SOON |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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