| 摘要 |
A semiconductor device includes a p-type collector region, a drift region arranged on the collector region, a base region arranged on the drift region, an emitter region arranged on the base region, a gate oxide film arranged on the bottom surface and side surface of a trench which penetrates the emitter region and the base region, and a gate electrode embedded in the inside of the trench so as to be opposed to the base region while interposing the gate oxide film therebetween, wherein the position of the lower surface of the base region is shallower in the region brought into contact with the gate oxide film than in the region spaced apart from the gate oxide film. |
