发明名称 |
VERTICAL TRANSISTOR WITH HARDENING IMPLANTATION |
摘要 |
A vertical transistor includes a semiconductor wafer having a plurality of pillar structures extending orthogonally from the semiconductor wafer. Each pillar structure forms a vertical pillar transistor having a top surface and a side surface orthogonal to the top surface. Then a hardening ion species is implanted into the vertical pillar transistor top surface. Then the vertical pillar transistor side surface is oxidized to form a side surface oxide layer. The side surface oxide layer is removed to form vertical pillar transistor having rounded side surfaces. |
申请公布号 |
US2014097400(A1) |
申请公布日期 |
2014.04.10 |
申请号 |
US201314101801 |
申请日期 |
2013.12.10 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
KIM YOUNG PIL;LEE HYUNG-KEW;MANOS PETER NICHOLAS;JUNG CHULMIN;KHOURY MAROUN GEORGES;SETIADI DADI |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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