METHOD FOR MANUFACTURING GAN-BASED LIGHT EMITTING DIODE DEVICE HAVING ADVANCED LIGHT EXTRACTION EFFICIENCY, OLED DEVICE HAVING ADVANCED LIGHT EXTRACTION EFFICIENCY

摘要

The present invention relates to a method for manufacturing gallium nitride and organic light emitting diode device which increases light extraction efficiency. The method reduces the possibility of total reflection in the inner side by forming an oxide film which is formed of a nano pattern on a substrate of the gallium nitride or organic light emitting diode device using a self-aligning nano structure and increases the light extraction efficiency. The characteristic of the method for manufacturing the light emitting diode device comprises; a step (a) of spreading a nano structure on a substrate; a step (b) of evaporating an oxide film having a low refractive index value than a refractive index of the substrate on the substrate in which the nano structure is spread; and a step (c) of forming a nano patterned oxide film on the substrate by eliminating the spread nano structure after the evaporation of the oxide film. According to the present invention, a self-aligning nano structure is spread on the substrate surface and an oxide film is evaporated between the nano structures and the nano structure is eliminated. An oxide film of nano size is formed on the substrate surface with a pattern and forms in light crystals. Therefore, light extraction efficiency is improved.