发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To inhibit enlargement of a semiconductor device even if a transmission side inductor and a reception side inductor are provided.SOLUTION: A first semiconductor chip 10 includes: a first substrate 102; a first circuit 100; a multilayer wiring layer 400; and a first inductor 310 and a second inductor 320. The first circuit 100 is formed on the first substrate 102. The multilayer wiring layer 400 is formed on the first substrate 102. The first inductor 310 is formed on the multilayer wiring layer 400 and is wound on a plane arranged parallel with the first substrate 102. The second inductor 320 is formed on the multilayer wiring layer 400, is wound in a plane arranged parallel with the first substrate 102, and overlaps with the first inductor 310 in a plane view. The first circuit 100 is connected with one of the first inductor 310 and the second inductor 320. In the plane view, at least a part of the first circuit 100 is positioned at the inner side of the first inductor 310 and the second inductor 320.
申请公布号 JP2014064015(A) 申请公布日期 2014.04.10
申请号 JP20130230353 申请日期 2013.11.06
申请人 RENESAS ELECTRONICS CORP 发明人 NAKASHIBA YASUTAKA
分类号 H01L21/822;H01L27/04;H04B5/02 主分类号 H01L21/822
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