| 摘要 |
PROBLEM TO BE SOLVED: To provide a process of manufacturing a semiconductor device capable of suppressing an increase of a leakage current of a magnetoresistive element.SOLUTION: A first magnetic material film composed of a boron-containing cobalt iron alloy is formed. A second magnetic material film containing no boron is formed on the first magnetic material film. By using plasma of an etching gas containing oxygen, hydrogen, and no halogens, the second magnetic material film is selectively etched against the first magnetic material film. |
