| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving miniaturization and to provide a method of manufacturing the same.SOLUTION: The semiconductor device includes: a semiconductor substrate 11 including a first-conductivity-type drain layer 17 and a second-conductivity-type base layer 18 provided on the drain layer; a gate electrode 15 provided in the semiconductor substrate and including a first portion; a gate insulating layer 14 provided between the gate electrode and the semiconductor substrate; an upper insulating layer 16 provided on the gate electrode; a first-conductivity-type source layer 19a provided on sidewalls of the upper insulating layer and having a width increasing toward the base layer; and a source electrode 21 provided on the source layer. |
