发明名称 DISPLAY DEVICE
摘要 PROBLEM TO BE SOLVED: To simplify a manufacturing process of a thin film transistor that is mounted on an EL display device.SOLUTION: A thin film transistor is manufactured as follows: a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked; a first resist mask is formed thereover; a thin-film stack body is formed by performing a first etching; a gate electrode layer is formed by performing a second etching including side etching to the thin-film stack body; and then a source electrode and a drain electrode layer and the like are formed using a second resist mask. By using this thin film transistor, an EL display device is manufactured.
申请公布号 JP2014063179(A) 申请公布日期 2014.04.10
申请号 JP20130228991 申请日期 2013.11.05
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MIYAIRI HIDEKAZU;KOMORI SHIGEKI;ISA TOSHIYUKI;UMEZAKI ATSUSHI
分类号 G09F9/30;H01L21/336;H01L27/32;H01L29/786;H01L51/50;H05B33/06;H05B33/26 主分类号 G09F9/30
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