发明名称 |
NON-VOLATILE MEMORY DEVICE |
摘要 |
A non-volatile memory device includes: a memory cell array including a plurality of memory cells each including a first variable resistance element and a first current steering element and a parameter generation circuit including a reference cell including a second variable resistance element and a second current steering element having the same current density-voltage characteristic as that of the first current steering element, wherein a conductive shorting layer for causing short-circuiting between the electrodes is formed on the side surfaces of the second variable resistance element. |
申请公布号 |
US2014098595(A1) |
申请公布日期 |
2014.04.10 |
申请号 |
US201314122708 |
申请日期 |
2013.03.27 |
申请人 |
KAWASHIMA YOSHIO;HAYAKAWA YUKIO;MIKAWA TAKUMI;PANASONIC CORPORATION |
发明人 |
KAWASHIMA YOSHIO;HAYAKAWA YUKIO;MIKAWA TAKUMI |
分类号 |
H01L45/00;G11C13/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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