| 发明名称 |
Silicon on Nothing Devices and Methods of Formation Thereof |
| 摘要 |
In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the portion of the substrate. |
| 申请公布号 |
US2014097521(A1) |
申请公布日期 |
2014.04.10 |
| 申请号 |
US201213648170 |
申请日期 |
2012.10.09 |
| 申请人 |
INFINEON TECHNOLOGIES DRESDEN GMBH |
发明人 |
KAUTZSCH THORALF;SCIRE ALESSIA;BIESELT STEFFEN |
| 分类号 |
H01L29/02;H01L21/26;H01L21/302 |
主分类号 |
H01L29/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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