SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

摘要

This semiconductor device (11b) is provided with: a semiconductor film (23) that comprises an oxide semiconductor film, and has a channel region (18b); a protective film (31) that is formed on the semiconductor film (23) in a form that covers the channel region (18b); a first inorganic insulating film (25) that is formed on the protective film (31) in a form having an area that overlaps with the channel region (18b); and an organic insulating film (26) that comprises a resin film formed on the first inorganic insulating film (25), and has a first opening (26a) that exposes the first inorganic insulating film (25) in the area that overlaps with the channel region (18b).