发明名称 PROCESS GAS GENERATION FOR CLEANING OF SUBSTRATES
摘要 <p>Provided are a method and system for cleaning a substrate (6, 14, 224, 932) with a cleaning system (902, 1004) comprising a pre-treatment system and a wet clean system. One or more objectives for the pre-treatment system are selected, and two or more pre-treatment operating variables including UV dose, substrate temperature, oxygen partial pressure, oxygen and ozone partial pressure, and/or total pressure, are optimized to meet the pre-treatment objectives, using metrology measurements. The substrate (6, 14, 224, 932) includes a layer (204, 208) to be cleaned and an underlying dielectric layer (212) having a k-value. A pre-treatment gas comprising oxygen and/or ozone is delivered onto a surface of the substrate (6, 14, 224, 932) and irradiated with a UV device, generating oxygen radicals. Cleaning of the substrate (6, 14, 224, 932) in the pre-treatment process is set at less than 100 % in order to ensure the change in It- value of the substrate (6, 14, 224, 932) is within a set range for the substrate application.</p>
申请公布号 WO2014055218(A1) 申请公布日期 2014.04.10
申请号 WO2013US59601 申请日期 2013.09.13
申请人 TOKYO ELECTRON LIMITED;TOKYO ELECTRON U.S. HOLDINGS, INC. 发明人 BROWN, IAN, J.
分类号 B08B7/00;H01L21/02;H01L21/66 主分类号 B08B7/00
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