发明名称 FILM-FORMING APPARATUS AND FILM-FORMING METHOD
摘要 <p>A film-forming apparatus (100) includes: a vacuum chamber (30) configured to store a substrate (34B) in which a through-hole is formed and a source of copper emission (35B); a vacuum pump (36) configured to decompress an interior of the vacuum chamber (30) to a predetermined degree of vacuum; a power supply (80) configured to generate electric power applied to the substrate (34B); and a driving mechanism for use in setting a distance between the substrate (34B) and the source of copper emission (35B). When a copper material emitted from the source of copper emission (35B) is deposited on one main surface of the substrate (34B) to block an opening of the through-hole in the one main surface by means of a deposited film formed of the copper material, a blocked state of the opening blocked by the deposited film is adjusted based on the distance and the electric power.</p>
申请公布号 KR20140043695(A) 申请公布日期 2014.04.10
申请号 KR20137010438 申请日期 2012.05.22
申请人 SHINMAYWA INDUSTRIES, LTD. 发明人 TSUCHIYA TAKAYUKI;MARUNAKA MASAO;KOIZUMI YASUHIRO;KONDO KAZUO
分类号 H01L21/205 主分类号 H01L21/205
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