发明名称 |
FILM-FORMING APPARATUS AND FILM-FORMING METHOD |
摘要 |
<p>A film-forming apparatus (100) includes: a vacuum chamber (30) configured to store a substrate (34B) in which a through-hole is formed and a source of copper emission (35B); a vacuum pump (36) configured to decompress an interior of the vacuum chamber (30) to a predetermined degree of vacuum; a power supply (80) configured to generate electric power applied to the substrate (34B); and a driving mechanism for use in setting a distance between the substrate (34B) and the source of copper emission (35B). When a copper material emitted from the source of copper emission (35B) is deposited on one main surface of the substrate (34B) to block an opening of the through-hole in the one main surface by means of a deposited film formed of the copper material, a blocked state of the opening blocked by the deposited film is adjusted based on the distance and the electric power.</p> |
申请公布号 |
KR20140043695(A) |
申请公布日期 |
2014.04.10 |
申请号 |
KR20137010438 |
申请日期 |
2012.05.22 |
申请人 |
SHINMAYWA INDUSTRIES, LTD. |
发明人 |
TSUCHIYA TAKAYUKI;MARUNAKA MASAO;KOIZUMI YASUHIRO;KONDO KAZUO |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|