发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio.SOLUTION: The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.
申请公布号 JP2014063141(A) 申请公布日期 2014.04.10
申请号 JP20130158663 申请日期 2013.07.31
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;MIYAKE HIROYUKI;SHISHIDO HIDEAKI;KOYAMA JUN;MATSUBAYASHI DAISUKE;MURAYAMA KEISUKE
分类号 G02F1/1368;G09F9/30;H01L21/822;H01L27/04;H01L29/786;H01L51/50;H05B33/14 主分类号 G02F1/1368
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