发明名称 SUBSTRATE FOR BONDING SEMICONDUCTOR LAMINATE AND PROCESS OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a substrate for bonding a semiconductor laminate containing an AlN sintered substrate capable of being excellently bonded to a semiconductor laminate by a lift-off method.SOLUTION: A substrate 10 for bonding a semiconductor laminate includes an AlN sintered substrate 12 and a metal film 14 on the AlN sintered substrate 12, where surface roughness Ra of the metal film 14 is 50nm or less.
申请公布号 JP2014063816(A) 申请公布日期 2014.04.10
申请号 JP20120206937 申请日期 2012.09.20
申请人 DOWA ELECTRONICS MATERIALS CO LTD 发明人 TOYODA TATSUNORI;KADOWAKI YOSHITAKA;OKAMOTO NORIAKI
分类号 H01L33/00;H01L21/02 主分类号 H01L33/00
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