发明名称 |
SUBSTRATE FOR BONDING SEMICONDUCTOR LAMINATE AND PROCESS OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate for bonding a semiconductor laminate containing an AlN sintered substrate capable of being excellently bonded to a semiconductor laminate by a lift-off method.SOLUTION: A substrate 10 for bonding a semiconductor laminate includes an AlN sintered substrate 12 and a metal film 14 on the AlN sintered substrate 12, where surface roughness Ra of the metal film 14 is 50nm or less. |
申请公布号 |
JP2014063816(A) |
申请公布日期 |
2014.04.10 |
申请号 |
JP20120206937 |
申请日期 |
2012.09.20 |
申请人 |
DOWA ELECTRONICS MATERIALS CO LTD |
发明人 |
TOYODA TATSUNORI;KADOWAKI YOSHITAKA;OKAMOTO NORIAKI |
分类号 |
H01L33/00;H01L21/02 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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