| 摘要 |
Provided is a silicon single crystal growing apparatus in which a graphite crucible is disposed inside a graphite heater and a quartz crucible is disposed inside the graphite crucible and which grows a crystal with the Czochralski method from a raw material molten liquid that fills the quartz crucible. The apparatus comprises, a heater outer insulating member on the outside of the graphite heater, a crucible lower part insulating member on the lower part of the graphite crucible, crucible upper part insulating members on the upper part of the straight body parts of the graphite crucible and the quartz crucible, a crucible outer insulating member positioned on the outside of the straight body part of the graphite crucible, crucible inner insulating members on the inside of the straight body parts of the graphite crucible and the quartz crucible, and a heat shielding member above the liquid surface of the raw material molten liquid. The graphite crucible and the quartz crucible are capable of moving up and down in the space formed inside between the crucible upper part insulating members, crucible outer insulating member and crucible inner insulating members. Accordingly, a silicon single crystal growing apparatus and a silicon single crystal growing method are provided with which heat retaining properties of the liquid surface of the raw material molten liquid can be maintained and dislocation due to solidification, etc. can be suppressed. |
