发明名称 |
OXIDE SEMICONDUCTOR FILM, TRANSISTOR, AND SEMICONDUCTOR DEVICE |
摘要 |
To provide an oxide semiconductor film which has high stability and does not easily cause variation in electric characteristics of a transistor, a transistor including the oxide semiconductor film in its channel formation region, and a highly reliable semiconductor device including the transistor. The oxide semiconductor film including indium includes a crystal part whose c-axis is substantially perpendicular to a surface of the oxide semiconductor film. In the crystal part, the length of a crystal arrangement part containing indium and oxygen on a plane perpendicular to the c-axis is more than 1.5 nm. Further, the semiconductor device includes the transistor including the oxide semiconductor film in its channel formation region. |
申请公布号 |
US2014097428(A1) |
申请公布日期 |
2014.04.10 |
申请号 |
US201313790479 |
申请日期 |
2013.03.08 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TAKAHASHI MASAHIRO |
分类号 |
H01L29/04;H01L29/26;H01L29/786 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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