| 摘要 |
Methods for depositing a kesterite film comprising a compound of the formula: Cu2−xZn1+ySn(S1−zSez)4+q, wherein 0≰x≰1; 0≰y≰1; 0≰z≰1;−1≰q≰1, generally include contacting a hydrazine-based solvent, a source of Cu, a source of Sn, a source of Zn carboxylate, a source of at least one of S and Se, under conditions sufficient to form a solution substantially free of solid particles; applying the solution onto a substrate to form a thin layer; and annealing the thin layer at a temperature, pressure, and length of time sufficient to form the kesterite film. Also disclosed are hydrazine-based precursor solutions for forming a kesterite film and a photovoltaic device including the kesterite film formed by the above method. |
