| 摘要 |
PROBLEM TO BE SOLVED: To effectively prevent desorption of hydrogen from a semiconductor layer after hydrogen treatment in a process of forming a photoelectric conversion layer of a chalcopyrite semiconductor.SOLUTION: A photoelectric conversion device comprises: a transistor 12 including a semiconductor layer 51 which is subjected to hydrogen treatment; a photoelectric conversion element 14 having a photoelectric conversion layer 43 formed by a chalcopyrite semiconductor; and a hydrogen desorption prevention layer 30 for preventing desorption of hydrogen from the semiconductor layer 51, which is arranged between the semiconductor layer 51 and the photoelectric conversion layer 43 and formed from a silicon nitride (SiNx). The hydrogen desorption prevention layer 30 includes an insulation layer 26 with a film thickness T1 and an insulation layer 32 with a film thickness T2 (T1<T2). A film thickness T (T=T1+T2) of the hydrogen desorption prevention layer 30 is set at not less than 850 nm and not more than 1300 nm. |
