发明名称 |
PATTERN FORMING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method by which a fine pattern with small roughness can be formed.SOLUTION: The pattern forming method includes steps of: forming a resist film by applying a resist composition on a process target body; patterning the resist film by exposure and development; forming a surface modified region on the process target body by using the patterned resist film; removing the patterned resist film; applying a block copolymer containing a first polymer and a second polymer on the process target body; subjecting the block copolymer to phase separation; and removing one of the first polymer and the second polymer of the phase-separated block copolymer. The resist composition comprises: a resin component having a structural unit which shows increase in the polarity by an action of an acid and includes an acid decomposable group having a monocyclic or linear hydrocarbon group; and an acid generator component which generates an acid by exposure. |
申请公布号 |
JP2014062990(A) |
申请公布日期 |
2014.04.10 |
申请号 |
JP20120207413 |
申请日期 |
2012.09.20 |
申请人 |
TOKYO ELECTRON LTD;TOKYO OHKA KOGYO CO LTD |
发明人 |
MURAMATSU MAKOTO;KITANO TAKAHIRO;TOMITA TADATOSHI;TAUCHI HIROSHI;MOTOIKE NAOTO;NAMITO TOSHIAKI;OMORI KATSUMI |
分类号 |
G03F7/40;C08F297/00;G03F7/039;G03F7/11;H01L21/027 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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