发明名称 PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a pattern forming method by which a fine pattern with small roughness can be formed.SOLUTION: The pattern forming method includes steps of: forming a resist film by applying a resist composition on a process target body; patterning the resist film by exposure and development; forming a surface modified region on the process target body by using the patterned resist film; removing the patterned resist film; applying a block copolymer containing a first polymer and a second polymer on the process target body; subjecting the block copolymer to phase separation; and removing one of the first polymer and the second polymer of the phase-separated block copolymer. The resist composition comprises: a resin component having a structural unit which shows increase in the polarity by an action of an acid and includes an acid decomposable group having a monocyclic or linear hydrocarbon group; and an acid generator component which generates an acid by exposure.
申请公布号 JP2014062990(A) 申请公布日期 2014.04.10
申请号 JP20120207413 申请日期 2012.09.20
申请人 TOKYO ELECTRON LTD;TOKYO OHKA KOGYO CO LTD 发明人 MURAMATSU MAKOTO;KITANO TAKAHIRO;TOMITA TADATOSHI;TAUCHI HIROSHI;MOTOIKE NAOTO;NAMITO TOSHIAKI;OMORI KATSUMI
分类号 G03F7/40;C08F297/00;G03F7/039;G03F7/11;H01L21/027 主分类号 G03F7/40
代理机构 代理人
主权项
地址