发明名称 FUNCTIONAL FILM
摘要 PROBLEM TO BE SOLVED: To provide a high performance functional film having high gas barrier property or the like.SOLUTION: The functional film has an inorganic layer containing silicon nitride as a main component on the surface of a substrate whose surface is composed of an organic compound. The functional film is characterized in that the inorganic layer has a residual compression stress of 200-4,000 MPa, and in a fourier transformation infrared absorption spectrum, the peak of Si-N bond located in 800-900 cm, the peak of Si-H bond located in 2,100-2,200 cm, and the peak of N-H located in 3,300-3,400 cmsatisfy [0.02<SiH/SiN<0.14] and [0.005<NH/SiN<0.09].
申请公布号 JP2014061679(A) 申请公布日期 2014.04.10
申请号 JP20120209356 申请日期 2012.09.24
申请人 FUJIFILM CORP 发明人 MOCHIZUKI YOSHIHIKO;FUJINAWA ATSUSHI
分类号 B32B9/00 主分类号 B32B9/00
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