| 摘要 |
A semiconductor structure includes a silicon substrate, a titanium layer, a nickel layer, a silver layer and a metallic adhesion layer, wherein the silicon substrate comprises a back surface, and the titanium layer comprises an upper surface. The titanium layer is formed on the back surface, the nickel layer is formed on the upper surface, the silver layer is formed on the nickel layer, and the metallic adhesion layer is formed between the nickel layer and the silver layer. |
