SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To enable stable temperature control by using a radiation thermometer and enable formation of a good silicon carbide film.SOLUTION: A substrate processing apparatus comprises: a substrate holder for holding a substrate; a cylindrical heat generator which is arranged to surround the substrate holder and composes a reaction chamber; a reaction tube arranged to surround the cylindrical heat generator; and a radiation thermometer arranged under a lower end of the reaction tube, for measuring a temperature of the cylindrical heat generator. The cylindrical heat generator is composed of a plurality of ring-shaped members stacked along a longer direction, in which at least one among the ring-shaped members includes a projection arranged on an outer peripheral part of the ring-shaped member, for measuring the temperature by the radiation thermometer.