发明名称 PATTERN FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a pattern formation method capable of improving flatness of chemical-epitaxy and easily transferring a microphase separation pattern to a lower layer film.SOLUTION: According to an embodiment, a pattern formation method comprises the steps of: forming a resist pattern including an opening through which a first region of a coating-type glass film is exposed, the coating-type glass film provided on a substrate via a processed film; forming a neutralization film on the coating-type glass film; forming a self-organization material layer having a first and a second segment on the coating-type glass film; forming a self-organization pattern having a first portion including the first segment and a second portion including the second segment by microphase-separating the self-organization material layer; and removing one of the first portion and the second portion and processing the processed film using the other as a mask.
申请公布号 JP2014063884(A) 申请公布日期 2014.04.10
申请号 JP20120208276 申请日期 2012.09.21
申请人 TOSHIBA CORP 发明人 KATO HIROKAZU;KAWANISHI AYAKO
分类号 H01L21/027;G03F7/26;G03F7/40 主分类号 H01L21/027
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