| 摘要 |
<p>The main purpose of the present invention is to provide a photovoltaic device, which makes it possible to improve efficiency, while reducing harmfulness, and which uses a compound semiconductor, and a method for manufacturing the photovoltaic device. This photovoltaic device is provided with: a photoelectric conversion layer that contains a compound semiconductor; a semiconductor layer laminated on the front surface of the photoelectric conversion layer; a contact layer disposed on the semiconductor layer side that is the reverse side of the photoelectric conversion layer; and an electrode that is laminated on the front surface of the contact layer. The semiconductor layer contains a first crystal that contains Al, In and P, and the contact layer contains a second crystal having Ge as a main component. This method for manufacturing the photovoltaic device has: a step for epitaxially growing the photoelectric conversion layer on a substrate, said photoelectric conversion layer containing the compound semiconductor; a step for epitaxially growing the semiconductor layer on the front surface of the photoelectric conversion layer thus formed, said semiconductor layer having the first crystal containing Al, In and P; a step for epitaxially growing the contact layer on the upper surface side of the thus formed semiconductor layer, said contact layer having the second crystal having Ge as a main component; and a step for forming the electrode on the front surface of the thus formed contact layer.</p> |
