| 摘要 |
A method for fabricating a vertical type light emitting diode is provided to remove the whole substrate uniformly by minimizing the impact when separating a substrate by the laser irradiation by exposing a part of interfaces between a substrate and a semiconductor layer. A semiconductor layer(60) includes a first semiconductor layer(30), an active layer(40), and a second semiconductor layer(50). The semiconductor layer is formed on a substrate(10). At least one groove(70) or more are formed in a region corresponding to an effective irradiation area of the laser. The groove is formed over an outer part of the effective irradiation area of the other adjacent laser. |
