| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce saturation current sensitivity to variation in gate voltage without an adverse effect.SOLUTION: A semiconductor device according to the present embodiment of the present application comprises: a channel layer 12 formed on a substrate; an insulation layer 20 formed in contact with the channel layer 12; an impurity-doped first semiconductor layer 22 formed on the insulation layer 20 on the opposite side to the channel layer 12; an impurity-doped second semiconductor layer 24 formed on the first semiconductor layer 22 on the opposite side to the insulation layer 20; and gate electrodes 26 formed on the second semiconductor layer 24 on the opposite side to the first semiconductor layer 22. A value obtained by division of an impurity density of the first semiconductor layer 22 by a dielectric constant of the first semiconductor layer 22 is larger than a value obtained by division of an impurity density of the second semiconductor layer 24 by a dielectric constant of the second semiconductor layer 24. |
