发明名称 |
METHOD TO PROTECT AGAINST CONTACT RELATED SHORTS ON UTBB |
摘要 |
Isolation trenches are etched through an active silicon layer overlying a buried oxide on a substrate into the substrate, and through any pad dielectric(s) on the active silicon layer. Lateral epitaxial growth of the active silicon layer forms protrusions into the isolation trenches to a lateral distance of at least about 5 nanometers, and portions of the isolation trenches around the protrusions are filled with dielectric. Raised source/drain regions are formed on portions of the active silicon layer including a dielectric. As a result, misaligned contacts passing around edges of the raised source/drain regions remain spaced apart from sidewalls of the substrate in the isolation trenches. |
申请公布号 |
US2014099769(A1) |
申请公布日期 |
2014.04.10 |
申请号 |
US201213647986 |
申请日期 |
2012.10.09 |
申请人 |
STMICROELECTRONICS, INC.;INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
LOUBET NICOLAS;LIU QING;PONOTH SHOM |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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