发明名称 |
TECHNIQUE FOR UNIFORM CMP |
摘要 |
Pitch-dependent dishing and erosion following CMP treatment of copper features is quantitatively assessed by atomic force microscopy (AFM) and transmission electron microscopy (TEM). A new sequence of processing steps presented herein is used to prevent dishing and to reduce significantly the local pitch- and pattern density-induced CMP non-uniformity for copper metal lines having widths and spacing in the range of about 32-128 nm. The new process includes a partial copper deposition step followed by deposition of a silicon carbide/nitride (SiCxNy) blocking layer. A multi-step CMP process planarizes areas of the resulting irregular surface that have narrow features, while the blocking layer protects areas that have wide features. |
申请公布号 |
US2014097539(A1) |
申请公布日期 |
2014.04.10 |
申请号 |
US201313928084 |
申请日期 |
2013.06.26 |
申请人 |
STMICROELECTRONICS, INC.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHANG JOHN H.;TSENG WEI-TSU;CHENG TIEN-JEN;ECONOMIKOS LAERTIS |
分类号 |
H01L21/768;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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