发明名称 |
COMPRESSIVELY STRAINED SOI SUBSTRATE |
摘要 |
A method of forming a strained silicon-on-insulator includes forming a first wafer having a compressively strained active semiconductor layer, forming a second wafer having an insulation layer formed above a bulk semiconductor layer, and bonding the compressively strained active semiconductor layer of the first wafer to the insulation layer of the second wafer. |
申请公布号 |
US2014097467(A1) |
申请公布日期 |
2014.04.10 |
申请号 |
US201313858203 |
申请日期 |
2013.04.08 |
申请人 |
CORPORATION INTERNATIONAL BUSINESS MACHINES |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;SHAHIDI GHAVAM |
分类号 |
H01L29/165 |
主分类号 |
H01L29/165 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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