摘要 |
Provided is a semiconductor memory device for simultaneously programming a plurality of banks. The semiconductor memory device includes: a memory cell array comprising a plurality of banks; a plurality of data buffers storing a plurality of pieces of program data to be programmed in the corresponding banks; and a plurality of scan latches configured to scan the plurality of program data transmitted from the corresponding data buffers, and configured to generate 1st through n-1th sub program data, n being a natural number greater than 2. |