发明名称 |
METHOD FOR PRODUCING NITRIDE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for efficiently producing a nitride crystal excellent in quality and conductivity through enhancing a growth rate and improving a utilization efficiency in raw materials by controlling a condition of crystalline raw materials used for producing the nitride crystal by an ammonothermal process.SOLUTION: The method for producing a nitride crystal in which a nitride crystalline raw material 8 is charged in a raw material charging area 9 in a reaction vessel 20 and a crystal growth is carried out in the reaction vessel 20 in the presence of a supercritical and/or subcritical solvent, in which the crystal growth is carried out by charging the nitride crystalline raw material 8 in the raw material charging area 9 in a bulk density of 0.7 to 4.5 g/cm. |
申请公布号 |
JP2014062023(A) |
申请公布日期 |
2014.04.10 |
申请号 |
JP20120236354 |
申请日期 |
2012.10.26 |
申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
NAGAOKA HIROFUMI;KAGAMITANI YUJI;FUJISAWA HIDEO;KAMATA KAZUNORI;MIKAWA YUTAKA |
分类号 |
C30B29/38;C30B7/10;H01L21/208 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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