发明名称 METHOD FOR PRODUCING NITRIDE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for efficiently producing a nitride crystal excellent in quality and conductivity through enhancing a growth rate and improving a utilization efficiency in raw materials by controlling a condition of crystalline raw materials used for producing the nitride crystal by an ammonothermal process.SOLUTION: The method for producing a nitride crystal in which a nitride crystalline raw material 8 is charged in a raw material charging area 9 in a reaction vessel 20 and a crystal growth is carried out in the reaction vessel 20 in the presence of a supercritical and/or subcritical solvent, in which the crystal growth is carried out by charging the nitride crystalline raw material 8 in the raw material charging area 9 in a bulk density of 0.7 to 4.5 g/cm.
申请公布号 JP2014062023(A) 申请公布日期 2014.04.10
申请号 JP20120236354 申请日期 2012.10.26
申请人 MITSUBISHI CHEMICALS CORP 发明人 NAGAOKA HIROFUMI;KAGAMITANI YUJI;FUJISAWA HIDEO;KAMATA KAZUNORI;MIKAWA YUTAKA
分类号 C30B29/38;C30B7/10;H01L21/208 主分类号 C30B29/38
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