| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer with a low dislocation density, a semiconductor element, and a method for manufacturing a nitride semiconductor layer.SOLUTION: A semiconductor wafer 110 is provided by sequentially laminating an AlN buffer layer 22, a ground layer 24, a first high Ga composition layer 30, a high Al composition layer 42, a low Al composition layer 44, an intermediate part 50, and a second high Ga composition layer 60 on a substrate 10. In the intermediate part 50, an impurity containing any of Si, Mg, and B has a high concentration. The second high Ga composition layer 60 has larger tensile strain than the first high Ga composition layer 30 or smaller compressive strain than the first high Ga composition layer 30. The second high Ga composition layer 60 has tensile strain, and the first high Ga composition layer 30 has compressive strain. |
