| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of reducing the number of selection signals for selecting memory blocks.SOLUTION: The nonvolatile semiconductor memory device comprises: a memory cell array 10 including i (i: an integer of 2 or more) blocks each including a memory string MS having a plurality of memory cells MC, a first selection transistor Trand a second selection transistor Tr; row decoders Xfer_D, Xfer_S; a block decoder BD provided for each of the m (2≤m≤i) blocks and connected to a gate of a transfer transistor; and a switching circuit 30 selecting either one of a first signal line group and a second signal line group. |
