MULTICOMPONENT THIN FILM AND METHODS OF DEPOSITION THEREOF

摘要

A method of thin film deposition is disclosed. Said method comprises depositing, by ion-plasma sputtering, atoms of a target comprising a chemical composition of two or more elements onto a substrate located between the target and an anode. The ion-plasma sputtering takes place in a working gas, wherein the sputtered atoms of the target move from a sputtering zone to the substrate in a flux having a stoichiometry ratio. The method is characterized in that it comprises changing the stoichiometry ratio of the flux of the sputtered atoms depositing on the substrate relative to the stoichiometry ratio of the flux of the sputtered atoms in the sputtering zone. A computer program and a thin film with a variable stoichiometry ratio are also disclosed.