| 发明名称 |
A METHOD FOR PREPARING MONO-SILANE BY USING TRIALKOXYSILANE |
| 摘要 |
<p>The present invention relates to a production method of monosilane, and more specifically, to an economic production method of monosilane which produces the monosilane with high purity and high yield using trialkoxysilane, thereby practically using the monosilane for the composition of a thin semiconductor structure or a multipurpose high purity polycrystalline silicone.</p> |
| 申请公布号 |
KR20140043691(A) |
申请公布日期 |
2014.04.10 |
| 申请号 |
KR20130117796 |
申请日期 |
2013.10.02 |
| 申请人 |
OCI COMPANY LTD.;INSTITUTE OF ION-PLASMA AND LASER TECHNOLOGIES |
发明人 |
KIM, TAEK JOONG;KIM, YONG IL;KIM, KYUNG YEOL;KIM, DEOK YUN;ASHUROV KHATAM;SALIKHOV SHAVKAT;ROTSHTEYN VLADIMIR;ASHUROVA KHEKAYAT;KURBANOV AZIZ;ABDISAIDOV ILYOS;AZIZOV SULTAN;ASHUROV RUSTAM |
| 分类号 |
C01B33/04;B01J23/72 |
主分类号 |
C01B33/04 |
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