| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which omits a process and has high producibility.SOLUTION: According to an embodiment, a semiconductor device manufacturing method comprises: preparing a substrate part including a base substrate having a first heat expansion coefficient, an intermediate crystal layer which is arranged on the base substrate and has a first grating constant and has a principal surface including first and second regions and an intermediate region between the first and second regions, and a mask layer arranged on the intermediate region; growing in the first and second regions, first and second lower layers each including a semiconductor crystal having a second heat expansion coefficient larger than the first heat expansion coefficient and a second grating constant larger than the first grating constant; growing first and second upper layers each including a semiconductor crystal, from over the first and second lower layers so as to extend over the mask layer and bringing the first and second upper layers into contact with each other on the mask layer; and lowering temperature to separate the first and second upper layers from each other at a border of the first and second upper layers on the mask layer. |
