| 摘要 |
PROBLEM TO BE SOLVED: To provide a display device including a novel, more intelligent semiconductor device that allows a photoelectric conversion layer which is formed in a later step, to be formed widely and that can increase the light reception area (opening ratio) of a sensor.SOLUTION: An image sensor comprises: a transistor including a channel region, a source region, and a drain region; an insulation film above the transistor; and a photodiode above the insulation film. The transistor is provided in a position where it overlaps with the photodiode. |
