| 摘要 |
<p>An electrode, in particular a microelectrode, wherein the surface area (48) of conductor material (44) exposed for use is defined by a covering layer (46) comprising a covalent or an intermediate nitride or mixtures thereof is described. The covering layer (46) may comprise a nitride selected from the group consisting of Si, B, Al, Ga, In, P, Mn,Fe, Co, Ni, Te, Tl and Re nitrides or mixtures thereof. Methods of fabrication of the electrode are also provided.</p> |
