| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method by which a silicon oxide film with a higher wet etching resistance in comparison to conventional one can be deposited in low temperature film deposition at 350°C or lower.SOLUTION: There is provided the film deposition method in which a plurality of processing objects W are collectively inserted into a processing container 1, the temperature of a plurality of inserted processing objects W is set to be 350°C or lower, aminosilane gas and oxidation gas as Si source gas are supplied into the processing container 1, and a silicon oxide film is collectively deposited on the surface of the plurality of processing objects W by thermal CVD. The method uses for the oxide gas, Ogas as a first oxide gas and HO as a second oxide gas, and uses bis tertiary-butylaminosilane for the aminosilane gas. |
