发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for suppressing increase of the number of processes and having high throughput by performing a process for forming a thin film transistor and a process for forming a photoelectric conversion layer at the same time.SOLUTION: In a manufacturing method, a thin film transistor 102 is formed on a first substrate 101, a photoelectric conversion element 112 is formed on a second substrate 108, and a conductive particle 118 is sandwiched between the first substrate 101 and the second substrate 108 which face each other so as to include the film transistor 102 and the photoelectric conversion element 112 inside. Thereby, the film transistor and the photoelectric conversion element are connected electrically, to manufacture a semiconductor device.
申请公布号 JP2014064024(A) 申请公布日期 2014.04.10
申请号 JP20130234905 申请日期 2013.11.13
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 NISHI KAZUO;MARUYAMA JUNYA;KUSUMOTO NAOTO;SUGAWARA YUSUKE
分类号 H01L21/02;H01L21/336;H01L27/12;H01L27/146;H01L29/786;H01L31/02;H01L31/04;H01L31/10;H04N5/335 主分类号 H01L21/02
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