| 摘要 |
This semiconductor device (11b) is provided with: a semiconductor film (23) that comprises an oxide semiconductor, and includes a channel region (18b); a first inorganic insulating film (25) formed on the semiconductor film (23); a first organic insulating film (26) formed on the first inorganic insulating film (25); and an inorganic film group (28). The inorganic film group (28) has: a first electrode (30) comprising an inorganic conductive film formed on the first organic insulating film (26); a second inorganic insulating film (27) formed on the first electrode (30); and a second electrode (19) that comprises an inorganic conductive film formed on the second inorganic insulating film (27), and is electrically connected to the semiconductor film (23) via openings (29, 30a) formed in such a manner as to penetrate the first inorganic insulating film (25), the first organic insulating film (26), the first electrode (30) and the second inorganic insulating film (27). The first organic insulating film (26) is disposed between the first inorganic insulating film (25) and the inorganic film group (28). |
