THIN LAYER DEPOSITION SYSTEM AND METHOD OF DEPOSITING THIN LAYER USING THE SAME

摘要

The present invention relates to a thin layer deposition system and a method for depositing a thin layer using the same and, more specifically, to a thin layer deposition system and a method for depositing a thin layer using the same capable of measuring plasma parameters by using a probe of a thin layer deposition system using both a DC power and an RF power. Moreover, the present invention relates to a thin layer deposition system and a method for depositing a thin layer using the same capable of conducting an even sputter deposition, without applying plasma damages onto the top of p-type nitride semiconductor layer by controlling the DC and RF powers in real time.