发明名称 PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 <p>Abase conductive member (207) is formed on a surface and in a hole section (205) of a substrate (201), and a resist (208) is formed on a part of the base conductive member (207) in which a conductive layer (209, 210) is not to be formed. The conductive layer (209, 210) is formed on a part except for the part in which the resist (208) has been formed, and a mask metal (212) is formed on the conductive layer (209, 210). Then, the resist (208) is removed, and the base conductive member (207) is etched using the mask metal (212) as a mask to form the conductive layer (209, 210) into a predetermined shape.</p>
申请公布号 EP2546868(A4) 申请公布日期 2014.04.09
申请号 EP20110752975 申请日期 2011.02.17
申请人 PANASONIC CORPORATION 发明人 MURAGISHI, ISAO;KAI, TAKAYUKI;SAITO, DAISHIRO;YAMAMOTO, DAISUKE;KOIWASAKI, TAKESHI
分类号 H01L21/768;H01L21/48;H01L23/00;H01L23/48;H01L23/498 主分类号 H01L21/768
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