| 摘要 |
A semiconductor device of the invention has a plurality of P-channel transistors, to which resistance elements are inserted in series, prepared on a pull-up side of a driver such that an ON resistance value on the P-channel transistor side and a resistance value of the resistance element can be selected. In addition, also on a pull-down side of the driver, a plurality of N-channel transistors to which resistance elements are inserted in series are prepared such that an ON resistance value on the N-channel transistor side and a resistance value of the resistance element can be selected. A driver section having a linear current-voltage characteristic is realized by combination of those described. |
